Minimum DC Current Gain:
40
Transistor Type:
NPN
Dimensions:
9.9 x 4.5 x 14.2mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
40 W
Maximum Collector Emitter Saturation Voltage:
1 V
Maximum Collector Base Voltage:
300 V
Maximum Collector Emitter Voltage:
120 V
Maximum Base Emitter Saturation Voltage:
1.5 V
Maximum Operating Frequency:
1 MHz
Height:
14.2mm
Width:
4.5mm
Length:
9.9mm
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum DC Collector Current:
6 A
Maximum Emitter Base Voltage:
8 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
8 Weeks
Base Part Number:
KSD363
Detailed Description:
Bipolar (BJT) Transistor NPN 120V 6A 10MHz 40W Through Hole TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 1A, 5V
Transistor Type:
NPN
Frequency - Transition:
10MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 100mA, 1A
Supplier Device Package:
TO-220-3
Voltage - Collector Emitter Breakdown (Max):
120V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
40W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
6A
Current - Collector Cutoff (Max):
1mA (ICBO)
Manufacturer:
ON Semiconductor
