Minimum DC Current Gain:
3
Transistor Type:
NPN
Dimensions:
10.67 x 4.7 x 9.4mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
118.16 W
Maximum Continuous Collector Current:
2 A
Maximum Collector Emitter Voltage:
600 V
Maximum Base Emitter Saturation Voltage:
1.2 V
Height:
9.4mm
Width:
4.7mm
Length:
10.67mm
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum Collector Emitter Saturation Voltage:
3 V
Maximum Emitter Base Voltage:
12 V
Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
KSC5502
Detailed Description:
Bipolar (BJT) Transistor NPN 600V 2A 11MHz 50W Through Hole TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
4 @ 1A, 1V
Transistor Type:
NPN
Frequency - Transition:
11MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 200mA, 1A
Supplier Device Package:
TO-220-3
Voltage - Collector Emitter Breakdown (Max):
600V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
50W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
2A
Current - Collector Cutoff (Max):
100µA
Manufacturer:
ON Semiconductor
