Transistor Type:
NPN
Dimensions:
6.73 x 6.22 x 2.39mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
50 W
Maximum Collector Emitter Saturation Voltage:
3 V
Maximum Collector Base Voltage:
1200 V
Maximum Collector Emitter Voltage:
600 V
Maximum Base Emitter Saturation Voltage:
1.2 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
12 V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum DC Collector Current:
2 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
23 Weeks
Base Part Number:
KSC5502
Detailed Description:
Bipolar (BJT) Transistor NPN 600V 2A 11MHz 50W Surface Mount TO-252AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
4 @ 1A, 1V
Transistor Type:
NPN
Frequency - Transition:
11MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 200mA, 1A
Supplier Device Package:
TO-252AA
Voltage - Collector Emitter Breakdown (Max):
600V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
50W
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Collector (Ic) (Max):
2A
Current - Collector Cutoff (Max):
100µA
Manufacturer:
ON Semiconductor
