Transistor Type:
NPN
Dimensions:
8 x 3.25 x 11mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
7 W
Maximum Collector Emitter Saturation Voltage:
0.6 V
Maximum Collector Base Voltage:
300 V
Maximum Collector Emitter Voltage:
300 V
Maximum Base Emitter Saturation Voltage:
1 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-126
Number of Elements per Chip:
1
Maximum DC Collector Current:
100 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
51 Weeks
Base Part Number:
KSC3503
Detailed Description:
Bipolar (BJT) Transistor NPN 300V 100mA 150MHz 7W Through Hole TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 10mA, 10V
Transistor Type:
NPN
Frequency - Transition:
150MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
600mV @ 2mA, 20mA
Supplier Device Package:
TO-126-3
Voltage - Collector Emitter Breakdown (Max):
300V
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
7W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
