Minimum DC Current Gain:
10
Transistor Type:
NPN
Dimensions:
8 x 3.25 x 11mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
10 W
Maximum Collector Emitter Saturation Voltage:
1 V
Maximum Collector Base Voltage:
500 V
Maximum Collector Emitter Voltage:
400 V
Maximum Base Emitter Saturation Voltage:
2 V
Height:
11mm
Width:
3.25mm
Length:
8mm
Package Type:
TO-126
Number of Elements per Chip:
1
Maximum DC Collector Current:
500 mA
Maximum Emitter Base Voltage:
7 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
19 Weeks
Base Part Number:
KSC2752
Detailed Description:
Bipolar (BJT) Transistor NPN 400V 500mA 1W Through Hole TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 50mA, 5V
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 60mA, 300mA
Supplier Device Package:
TO-126-3
Voltage - Collector Emitter Breakdown (Max):
400V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
1W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
500mA
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is KSC2752OSTU. It features up to 10 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 8 x 3.25 x 11mm. The product is available in through hole configuration. Provides up to 10 w maximum power dissipation. The product has a maximum 1 v collector emitter saturation voltage . Additionally, it has 500 v maximum collector base voltage. Whereas features a 400 v of collector emitter voltage (max). In addition, the product has a maximum 2 v base emitter saturation voltage . In addition, the height is 11mm. Furthermore, the product is 3.25mm wide. Its accurate length is 8mm. The package is a sort of to-126. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 500 ma. It features a 7 v of maximum emitter base voltage. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 19 weeks of manufacturer standard lead time. Base Part Number: ksc2752. It features bipolar (bjt) transistor npn 400v 500ma 1w through hole to-126-3. Furthermore, 30 @ 50ma, 5v is the minimum DC current gain at given voltage. The 1v @ 60ma, 300ma is the maximum Vce saturation. to-126-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 400v. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 1w. Moreover, the product comes in to-225aa, to-126-3. The maximum collector current includes 500ma. In addition, 10µa (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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