Transistor Type:
NPN
Dimensions:
9.9 x 4.5 x 18.95mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
40 W
Maximum Collector Emitter Saturation Voltage:
0.6 V
Maximum Collector Base Voltage:
150 V
Maximum Collector Emitter Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
1.5 V
Maximum Emitter Base Voltage:
7 V
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum DC Collector Current:
7 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
37 Weeks
Base Part Number:
KSC2334
Detailed Description:
Bipolar (BJT) Transistor NPN 100V 7A 1.5W Through Hole TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 3A, 5V
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
600mV @ 500mA, 5A
Supplier Device Package:
TO-220-3
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
1.5W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
7A
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
ON Semiconductor
