Transistor Type:
NPN
Dimensions:
4.9 x 3.9 x 8mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
1 W
Maximum Collector Emitter Saturation Voltage:
2 V
Maximum Collector Base Voltage:
30 V
Maximum Collector Emitter Voltage:
30 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
2 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
26 Weeks
Base Part Number:
KSC2328
Detailed Description:
Bipolar (BJT) Transistor NPN 30V 2A 120MHz 1W Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 500mA, 2V
Transistor Type:
NPN
Frequency - Transition:
120MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2V @ 30mA, 1.5A
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
30V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
1W
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 Long Body (Formed Leads)
Current - Collector (Ic) (Max):
2A
Current - Collector Cutoff (Max):
100µA (ICBO)
Manufacturer:
ON Semiconductor
