Transistor Type:
NPN
Dimensions:
4.58 x 3.86 x 4.58mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
500 mW
Maximum Collector Base Voltage:
120 V
Maximum Collector Emitter Voltage:
120 V
Maximum Base Emitter Saturation Voltage:
0.3 V
Maximum Operating Frequency:
110 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
50 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
KSC1845
Detailed Description:
Bipolar (BJT) Transistor NPN 120V 50mA 110MHz 500mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
300 @ 1mA, 6V
Transistor Type:
NPN
Frequency - Transition:
110MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
300mV @ 1mA, 10mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
120V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
500mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector (Ic) (Max):
50mA
Current - Collector Cutoff (Max):
50nA (ICBO)
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is KSC1845FTA. The transistor is a npn type. The given dimensions of the product include 4.58 x 3.86 x 4.58mm. The product is available in through hole configuration. Provides up to 500 mw maximum power dissipation. Additionally, it has 120 v maximum collector base voltage. Whereas features a 120 v of collector emitter voltage (max). In addition, the product has a maximum 0.3 v base emitter saturation voltage . It carries 110 mhz of maximum operating frequency. It features a 5 v of maximum emitter base voltage. The package is a sort of to-92. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 50 ma. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Base Part Number: ksc1845. It features bipolar (bjt) transistor npn 120v 50ma 110mhz 500mw through hole to-92-3. Furthermore, 300 @ 1ma, 6v is the minimum DC current gain at given voltage. The transition frequency of the product is 110mhz. The 300mv @ 1ma, 10ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 120v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 500mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) (formed leads). The maximum collector current includes 50ma. In addition, 50na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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