Transistor Type:
PNP
Dimensions:
8 x 3.25 x 11mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
10 W
Maximum Collector Emitter Saturation Voltage:
-0.5 V
Maximum Collector Base Voltage:
-40 V
Maximum Collector Emitter Voltage:
30 V
Maximum Base Emitter Saturation Voltage:
-2 V
Maximum Operating Frequency:
80 MHz
Maximum Emitter Base Voltage:
-5 V
Package Type:
TO-126
Number of Elements per Chip:
1
Maximum DC Collector Current:
3 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
51 Weeks
Base Part Number:
KSB772
Detailed Description:
Bipolar (BJT) Transistor PNP 30V 3A 80MHz 1W Through Hole TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 1A, 2V
Transistor Type:
PNP
Frequency - Transition:
80MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
500mV @ 200mA, 2A
Supplier Device Package:
TO-126-3
Voltage - Collector Emitter Breakdown (Max):
30V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
1W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
3A
Current - Collector Cutoff (Max):
1µA (ICBO)
Manufacturer:
ON Semiconductor
