ON Semiconductor KSB1151YSTU
Product Information
Manufacturer Standard Lead Time:
39 Weeks
Base Part Number:
KSB1151
Detailed Description:
Bipolar (BJT) Transistor PNP 60V 5A 1.3W Through Hole TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 2A, 1V
Transistor Type:
PNP
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
300mV @ 200mA, 2A
Supplier Device Package:
TO-126-3
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
1.3W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
5A
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
ON Semiconductor
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FAQs
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We accept all major payment methods for all products including ET14526911. Please check your shopping cart at the time of order.
You can order ON Semiconductor brand products with KSB1151YSTU directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor KSB1151YSTU. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor KSB1151YSTU.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14526911 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14526911.
Yes. We ship KSB1151YSTU Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is KSB1151YSTU. It has typical 39 weeks of manufacturer standard lead time. Base Part Number: ksb1151. It features bipolar (bjt) transistor pnp 60v 5a 1.3w through hole to-126-3. Furthermore, 160 @ 2a, 1v is the minimum DC current gain at given voltage. The transistor is a pnp type. The product is available in through hole configuration. The 300mv @ 200ma, 2a is the maximum Vce saturation. to-126-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 1.3w. Moreover, the product comes in to-225aa, to-126-3. The maximum collector current includes 5a. In addition, 10µa (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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