Transistor Type:
PNP
Dimensions:
9.9 x 4.5 x 9.2mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
25 W
Maximum Collector Emitter Saturation Voltage:
-1.5 V
Maximum Collector Base Voltage:
-150 V
Maximum Collector Emitter Voltage:
150 V
Maximum Operating Frequency:
4 MHz
Maximum Emitter Base Voltage:
-5 V
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum DC Collector Current:
1.5 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
9 Weeks
Base Part Number:
KSA940
Detailed Description:
Bipolar (BJT) Transistor PNP 150V 1.5A 4MHz 1.5W Through Hole TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 500mA, 10V
Transistor Type:
PNP
Frequency - Transition:
4MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 50mA, 500mA
Supplier Device Package:
TO-220-3
Voltage - Collector Emitter Breakdown (Max):
150V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
1.5W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
1.5A
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is KSA940TU. The transistor is a pnp type. The given dimensions of the product include 9.9 x 4.5 x 9.2mm. The product is available in through hole configuration. Provides up to 25 w maximum power dissipation. The product has a maximum -1.5 v collector emitter saturation voltage . Additionally, it has -150 v maximum collector base voltage. Whereas features a 150 v of collector emitter voltage (max). It carries 4 mhz of maximum operating frequency. It features a -5 v of maximum emitter base voltage. The package is a sort of to-220. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 1.5 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 9 weeks of manufacturer standard lead time. Base Part Number: ksa940. It features bipolar (bjt) transistor pnp 150v 1.5a 4mhz 1.5w through hole to-220-3. Furthermore, 40 @ 500ma, 10v is the minimum DC current gain at given voltage. The transition frequency of the product is 4mhz. The 1.5v @ 50ma, 500ma is the maximum Vce saturation. to-220-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 150v. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 1.5w. Moreover, the product comes in to-220-3. The maximum collector current includes 1.5a. In addition, 10µa (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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