Transistor Type:
PNP
Dimensions:
4.9 x 3.9 x 8mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
900 mW
Maximum Collector Emitter Saturation Voltage:
-1 V
Maximum Collector Base Voltage:
-120 V
Maximum Collector Emitter Voltage:
120 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
-5 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
800 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
26 Weeks
Base Part Number:
KSA916
Detailed Description:
Bipolar (BJT) Transistor PNP 120V 800mA 120MHz 900mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 100mA, 5V
Transistor Type:
PNP
Frequency - Transition:
120MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 50mA, 500mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
120V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
900mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 Long Body (Formed Leads)
Current - Collector (Ic) (Max):
800mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
