ON Semiconductor KSA812YMTF

KSA812YMTF ON Semiconductor
KSA812YMTF
ON Semiconductor

Product Information

Minimum DC Current Gain:
90
Transistor Type:
PNP
Dimensions:
2.9 x 1.3 x 0.97mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
150 mW
Maximum Collector Emitter Saturation Voltage:
-0.3 V
Maximum Collector Base Voltage:
-60 V
Maximum Collector Emitter Voltage:
50 V
Maximum Operating Frequency:
1 MHz
Height:
0.97mm
Width:
1.3mm
Length:
2.9mm
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
100 mA
Maximum Emitter Base Voltage:
-5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
KSA812
Detailed Description:
Bipolar (BJT) Transistor PNP 50V 100mA 180MHz 150mW Surface Mount SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
135 @ 1mA, 6V
Transistor Type:
PNP
Frequency - Transition:
180MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
300mV @ 10mA, 100mA
Supplier Device Package:
SOT-23-3
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
150mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is KSA812YMTF. It features up to 90 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 2.9 x 1.3 x 0.97mm. The product is available in surface mount configuration. Provides up to 150 mw maximum power dissipation. The product has a maximum -0.3 v collector emitter saturation voltage . Additionally, it has -60 v maximum collector base voltage. Whereas features a 50 v of collector emitter voltage (max). It carries 1 mhz of maximum operating frequency. In addition, the height is 0.97mm. Furthermore, the product is 1.3mm wide. Its accurate length is 2.9mm. The package is a sort of sot-23. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 100 ma. It features a -5 v of maximum emitter base voltage. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Base Part Number: ksa812. It features bipolar (bjt) transistor pnp 50v 100ma 180mhz 150mw surface mount sot-23-3. Furthermore, 135 @ 1ma, 6v is the minimum DC current gain at given voltage. The transition frequency of the product is 180mhz. The 300mv @ 10ma, 100ma is the maximum Vce saturation. sot-23-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 150mw. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum collector current includes 100ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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KSA812, PNP Epitaxial Silicon Transistor, Low Frequency Amplifier Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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SOT23 Manufacturing Source 31/May2013(PCN Assembly/Origin)
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Mold Compound 12/Dec/2007(PCN Design/Specification)
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Mult Dev Marking Chg 8/March/2018(PCN Design/Specification)
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Mult Dev EOL 16/Jul/2019(PCN Obsolescence/ EOL)
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KSA812(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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