ON Semiconductor KSA1406CSTU

ON Semiconductor

Product Information

Base Part Number:
KSA14
Detailed Description:
Bipolar (BJT) Transistor PNP 200V 100mA 400MHz 1.2W Through Hole TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 10mA, 10V
Transistor Type:
PNP
Frequency - Transition:
400MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
800mV @ 3mA, 30mA
Supplier Device Package:
TO-126-3
Voltage - Collector Emitter Breakdown (Max):
200V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
1.2W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is KSA1406CSTU. Base Part Number: ksa14. It features bipolar (bjt) transistor pnp 200v 100ma 400mhz 1.2w through hole to-126-3. Furthermore, 40 @ 10ma, 10v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 400mhz. The product is available in through hole configuration. The 800mv @ 3ma, 30ma is the maximum Vce saturation. to-126-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 200v. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 1.2w. Moreover, the product comes in to-225aa, to-126-3. The maximum collector current includes 100ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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KSA1406(Datasheets)

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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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