Transistor Type:
PNP
Dimensions:
5.1 x 4.1 x 8.2mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
1 W
Maximum Collector Emitter Saturation Voltage:
-0.5 V
Maximum Collector Base Voltage:
-50 V
Maximum Collector Emitter Voltage:
50 V
Maximum Base Emitter Saturation Voltage:
-1.2 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
-5 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
2 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
15 Weeks
Base Part Number:
KSA1281
Detailed Description:
Bipolar (BJT) Transistor PNP 50V 2A 100MHz 1W Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 500mA, 2V
Transistor Type:
PNP
Frequency - Transition:
100MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
500mV @ 50mA, 1A
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
1W
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 Long Body (Formed Leads)
Current - Collector (Ic) (Max):
2A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
