ON Semiconductor FPN560A_D27Z

ON Semiconductor

Product Information

Base Part Number:
FPN5
Detailed Description:
Bipolar (BJT) Transistor NPN 60V 3A 75MHz 1W Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
250 @ 500mA, 2V
Transistor Type:
NPN
Frequency - Transition:
75MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
300mV @ 200mA, 2A
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
1W
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector (Ic) (Max):
3A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FPN560A_D27Z. Base Part Number: fpn5. It features bipolar (bjt) transistor npn 60v 3a 75mhz 1w through hole to-92-3. Furthermore, 250 @ 500ma, 2v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 75mhz. The product is available in through hole configuration. The 300mv @ 200ma, 2a is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 1w. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) (formed leads). The maximum collector current includes 3a. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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FPN560/A(Datasheets)

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