Minimum DC Current Gain:
150
Transistor Type:
NPN
Dimensions:
2.9 x 1.3 x 1.04mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
300 mW
Maximum Collector Emitter Saturation Voltage:
0.3 V
Maximum Collector Base Voltage:
120 V
Maximum Collector Emitter Voltage:
120 V
Maximum Operating Frequency:
110 MHz
Height:
1.04mm
Width:
1.3mm
Length:
2.9mm
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
50 mA
Maximum Emitter Base Voltage:
5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
FJV184
Detailed Description:
Bipolar (BJT) Transistor NPN 120V 50mA 110MHz 300mW Surface Mount SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 1mA, 6V
Transistor Type:
NPN
Frequency - Transition:
110MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
300mV @ 1mA, 10mA
Supplier Device Package:
SOT-23-3
Voltage - Collector Emitter Breakdown (Max):
120V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
300mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
50mA
Current - Collector Cutoff (Max):
50nA (ICBO)
Manufacturer:
ON Semiconductor
