ON Semiconductor FJPF5027OTU
Product Information
Transistor Type:
NPN
Dimensions:
10.16 x 4.7 x 15.87mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
40 W
Maximum Collector Emitter Saturation Voltage:
2 V
Maximum Collector Base Voltage:
1100 V
Maximum Collector Emitter Voltage:
800 V
Maximum Base Emitter Saturation Voltage:
1.5 V
Maximum Operating Frequency:
15 MHz
Maximum Emitter Base Voltage:
7 V
Package Type:
TO-220F
Number of Elements per Chip:
1
Maximum DC Collector Current:
3 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
12 Weeks
Base Part Number:
FJPF5027
Detailed Description:
Bipolar (BJT) Transistor NPN 800V 3A 15MHz 40W Through Hole TO-220F
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 200mA, 5V
Transistor Type:
NPN
Frequency - Transition:
15MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2V @ 300mA, 1.5A
Supplier Device Package:
TO-220F
Voltage - Collector Emitter Breakdown (Max):
800V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
40W
Customer Reference:
Package / Case:
TO-220-3 Full Pack
Current - Collector (Ic) (Max):
3A
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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Yes. We ship FJPF5027OTU Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FJPF5027OTU. The transistor is a npn type. The given dimensions of the product include 10.16 x 4.7 x 15.87mm. The product is available in through hole configuration. Provides up to 40 w maximum power dissipation. The product has a maximum 2 v collector emitter saturation voltage . Additionally, it has 1100 v maximum collector base voltage. Whereas features a 800 v of collector emitter voltage (max). In addition, the product has a maximum 1.5 v base emitter saturation voltage . It carries 15 mhz of maximum operating frequency. It features a 7 v of maximum emitter base voltage. The package is a sort of to-220f. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 3 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 12 weeks of manufacturer standard lead time. Base Part Number: fjpf5027. It features bipolar (bjt) transistor npn 800v 3a 15mhz 40w through hole to-220f. Furthermore, 20 @ 200ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 15mhz. The 2v @ 300ma, 1.5a is the maximum Vce saturation. to-220f is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 800v. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 40w. Moreover, the product comes in to-220-3 full pack. The maximum collector current includes 3a. In addition, 10µa (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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