ON Semiconductor FJPF2145TU

ON Semiconductor

Product Information

Category:
Power Transistor
Maximum Base Source Voltage:
±20V
Minimum DC Current Gain:
8
Transistor Type:
NPN
Dimensions:
10.36 x 4.9 x 16.07mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
40 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
16.07mm
Maximum Collector Source Voltage:
0.209V
Width:
4.9mm
Length:
10.36mm
Package Type:
TO-220F
Minimum Operating Temperature:
-55 °C
Maximum DC Collector Current:
5 A
Maximum Base Current:
1.5A
Maximum Operating Temperature:
+125 °C
Pin Count:
3
Manufacturer Standard Lead Time:
26 Weeks
Base Part Number:
FJPF2145
Detailed Description:
Bipolar (BJT) Transistor NPN 800V 5A 15MHz 40W Through Hole TO-220F-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 200mA, 5V
Transistor Type:
NPN
Frequency - Transition:
15MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2V @ 300mA, 1.5A
Series:
ESBC™
Supplier Device Package:
TO-220F-3
Voltage - Collector Emitter Breakdown (Max):
800V
Packaging:
Tube
Operating Temperature:
-55°C ~ 125°C (TJ)
Power - Max:
40W
Customer Reference:
Package / Case:
TO-220-3 Full Pack
Current - Collector (Ic) (Max):
5A
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
ON Semiconductor
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is FJPF2145TU. It is of power transistor category . it is designed with a Maximum Base Source Voltage of ±20v It features up to 8 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 10.36 x 4.9 x 16.07mm. The product is available in through hole configuration. Provides up to 40 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 16.07mm. It has a Maximum Collector Source Voltage of 0.209v Furthermore, the product is 4.9mm wide. Its accurate length is 10.36mm. The package is a sort of to-220f. Whereas, the minimum operating temperature of the product is -55 °c. Moreover, it has a maximum DC collector current of 5 a. It has a Maximum Base Current of 1.5a It has a maximum operating temperature of +125 °c. It contains 3 pins. It has typical 26 weeks of manufacturer standard lead time. Base Part Number: fjpf2145. It features bipolar (bjt) transistor npn 800v 5a 15mhz 40w through hole to-220f-3. Furthermore, 20 @ 200ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 15mhz. The 2v @ 300ma, 1.5a is the maximum Vce saturation. The product esbc™, is a highly preferred choice for users. to-220f-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 800v. In addition, tube is the available packaging type of the product. The product has -55°c ~ 125°c (tj) operating temperature range. The maximum power of the product is 40w. Moreover, the product comes in to-220-3 full pack. The maximum collector current includes 5a. In addition, 10µa (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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FJPF2145, ESBC (Emitter-Switched Bipolar/MOSFET Cascode) Rated NPN Power Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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FJPF2145(Datasheets)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)

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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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