ON Semiconductor FJP5304D
Product Information
Base Part Number:
FJP530
Detailed Description:
Bipolar (BJT) Transistor NPN 400V 4A 70W Through Hole TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
8 @ 2A, 5V
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 500mA, 2.5A
Supplier Device Package:
TO-220-3
Voltage - Collector Emitter Breakdown (Max):
400V
Packaging:
Bulk
Power - Max:
70W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
4A
Current - Collector Cutoff (Max):
250mA
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET14521007 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14521007.
Yes. We ship FJP5304D Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FJP5304D. Base Part Number: fjp530. It features bipolar (bjt) transistor npn 400v 4a 70w through hole to-220-3. Furthermore, 8 @ 2a, 5v is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in through hole configuration. The 1.5v @ 500ma, 2.5a is the maximum Vce saturation. to-220-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 400v. In addition, bulk is the available packaging type of the product. The maximum power of the product is 70w. Moreover, the product comes in to-220-3. The maximum collector current includes 4a. In addition, 250ma is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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