Minimum DC Current Gain:
8
Transistor Type:
NPN
Dimensions:
9.9 x 4.5 x 15.7mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
50 W
Maximum Collector Emitter Saturation Voltage:
2 V
Maximum Collector Base Voltage:
1100 V
Maximum Collector Emitter Voltage:
800 V
Maximum Base Emitter Saturation Voltage:
1.5 V
Maximum Operating Frequency:
15 MHz
Height:
15.7mm
Width:
4.5mm
Length:
9.9mm
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum DC Collector Current:
3 A
Maximum Emitter Base Voltage:
7 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
8 Weeks
Base Part Number:
FJP5027
Detailed Description:
Bipolar (BJT) Transistor NPN 800V 3A 15MHz 50W Through Hole TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 200mA, 5V
Transistor Type:
NPN
Frequency - Transition:
15MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2V @ 300mA, 1.5A
Supplier Device Package:
TO-220-3
Voltage - Collector Emitter Breakdown (Max):
800V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
50W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
3A
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
ON Semiconductor
