Category:
Silicon Transistor
Maximum Base Source Voltage:
±20V
Minimum DC Current Gain:
20
Transistor Type:
NPN
Dimensions:
9.9 x 4.5 x 15.95mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
100 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
15.95mm
Maximum Collector Source Voltage:
2.21V
Width:
4.5mm
Length:
9.9mm
Package Type:
TO-220
Minimum Operating Temperature:
-55 °C
Maximum DC Collector Current:
2 A
Maximum Base Current:
1A
Maximum Operating Temperature:
+125 °C
Pin Count:
3
Base Part Number:
FJP216
Detailed Description:
Bipolar (BJT) Transistor NPN 800V 2A 5MHz 100W Through Hole TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 400mA, 3V
Transistor Type:
NPN
Frequency - Transition:
5MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
750mV @ 330mA, 1A
Series:
ESBC™
Supplier Device Package:
TO-220-3
Voltage - Collector Emitter Breakdown (Max):
800V
Packaging:
Tube
Operating Temperature:
-55°C ~ 125°C (TJ)
Power - Max:
100W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
2A
Current - Collector Cutoff (Max):
100µA
Manufacturer:
ON Semiconductor
