ON Semiconductor FJP13009H2TU
Product Information
Transistor Type:
NPN
Dimensions:
9.9 x 4.5 x 9.2mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
100 W
Maximum Collector Emitter Saturation Voltage:
3 V
Maximum Collector Base Voltage:
700 V
Maximum Collector Emitter Voltage:
400 V
Maximum Base Emitter Saturation Voltage:
1.6 V
Maximum Emitter Base Voltage:
9 V
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum DC Collector Current:
12 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
21 Weeks
Base Part Number:
FJP13009
Detailed Description:
Bipolar (BJT) Transistor NPN 400V 12A 4MHz 100W Through Hole TO-220-3
Transistor Type:
NPN
Frequency - Transition:
4MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3V @ 3A, 12A
Supplier Device Package:
TO-220-3
Voltage - Collector Emitter Breakdown (Max):
400V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
100W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
12A
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 5A, 5V
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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Yes. We ship FJP13009H2TU Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FJP13009H2TU. The transistor is a npn type. The given dimensions of the product include 9.9 x 4.5 x 9.2mm. The product is available in through hole configuration. Provides up to 100 w maximum power dissipation. The product has a maximum 3 v collector emitter saturation voltage . Additionally, it has 700 v maximum collector base voltage. Whereas features a 400 v of collector emitter voltage (max). In addition, the product has a maximum 1.6 v base emitter saturation voltage . It features a 9 v of maximum emitter base voltage. The package is a sort of to-220. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 12 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 21 weeks of manufacturer standard lead time. Base Part Number: fjp13009. It features bipolar (bjt) transistor npn 400v 12a 4mhz 100w through hole to-220-3. The transition frequency of the product is 4mhz. The 3v @ 3a, 12a is the maximum Vce saturation. to-220-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 400v. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 100w. Moreover, the product comes in to-220-3. The maximum collector current includes 12a. Furthermore, 15 @ 5a, 5v is the minimum DC current gain at given voltage. The on semiconductor's product offers user-desired applications.
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