Transistor Type:
NPN
Dimensions:
6.73 x 6.22 x 2.39mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.25 W
Maximum Collector Emitter Saturation Voltage:
0.5 V
Maximum Collector Base Voltage:
1050 V
Maximum Collector Emitter Voltage:
400 V
Maximum Base Emitter Saturation Voltage:
1.2 V
Maximum Emitter Base Voltage:
14 V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum DC Collector Current:
3 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
4 Weeks
Base Part Number:
FJD5553
Detailed Description:
Bipolar (BJT) Transistor NPN 400V 3A 1.25W Surface Mount D-Pak
Transistor Type:
NPN
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
500mV @ 200mA, 1A
Supplier Device Package:
D-Pak
Voltage - Collector Emitter Breakdown (Max):
400V
Packaging:
Cut Tape (CT)
Operating Temperature:
Power - Max:
1.25W
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Collector (Ic) (Max):
3A
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 400mA, 3V
Manufacturer:
ON Semiconductor
The FJD5553TM is an NPN Darlington transistor with a collector current rating of 10 amperes. This transistor is designed to handle high-voltage applications, making it suitable for various power-switching tasks. Its ability to handle high currents, low saturation voltage, and high voltage capability makes it well-suited for multiple industrial and automotive applications. It is housed in a TO-252 (DPAK) package, which provides efficient heat dissipation and compact size.
Key Attributes and Benefits of ON Semiconductor FJD5553TM Include:
Versatile Applications of ON Semiconductor FJD5553TM:
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