Minimum DC Current Gain:
200
Transistor Type:
NPN
Dimensions:
10.67 x 9.65 x 4.58mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
80 W
Maximum Continuous Collector Current:
8 A
Maximum Collector Emitter Voltage:
100 V
Height:
4.58mm
Width:
9.65mm
Length:
10.67mm
Package Type:
D2PAK
Number of Elements per Chip:
2
Maximum Collector Emitter Saturation Voltage:
2.5 V
Maximum Emitter Base Voltage:
5 V
Configuration:
Dual
Maximum Operating Temperature:
+150 °C
Pin Count:
2 + Tab
Manufacturer Standard Lead Time:
35 Weeks
Base Part Number:
FJB102
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 100V 8A 80W Surface Mount D²PAK
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 3A, 4V
Transistor Type:
NPN - Darlington
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
2.5V @ 80mA, 8A
Supplier Device Package:
D²PAK
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
80W
Customer Reference:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Collector (Ic) (Max):
8A
Current - Collector Cutoff (Max):
50µA
Manufacturer:
ON Semiconductor
