Transistor Type:
NPN
Dimensions:
15.5 x 5.5 x 14.5mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
60 W
Maximum Collector Emitter Saturation Voltage:
0.5 V
Maximum Collector Base Voltage:
1550 V
Maximum Collector Emitter Voltage:
750 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
6 V
Package Type:
TO-3PF
Number of Elements per Chip:
1
Maximum DC Collector Current:
6 A
Maximum Operating Temperature:
+125 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
FJAFS151
Detailed Description:
Bipolar (BJT) Transistor NPN 750V 6A 15.4MHz 60W Through Hole TO-3PF
DC Current Gain (hFE) (Min) @ Ic, Vce:
7 @ 3A, 5V
Transistor Type:
NPN
Frequency - Transition:
15.4MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
500mV @ 1.5A, 6A
Series:
ESBC™
Supplier Device Package:
TO-3PF
Voltage - Collector Emitter Breakdown (Max):
750V
Packaging:
Tube
Operating Temperature:
-55°C ~ 125°C (TJ)
Power - Max:
60W
Customer Reference:
Package / Case:
TO-3P-3 Full Pack
Current - Collector (Ic) (Max):
6A
Current - Collector Cutoff (Max):
100µA
Manufacturer:
ON Semiconductor
