Transistor Type:
PNP
Dimensions:
15.8 x 5 x 20.1mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
100 W
Maximum Collector Emitter Saturation Voltage:
-0.5 V
Maximum Collector Base Voltage:
-200 V
Maximum Collector Emitter Voltage:
140 V
Maximum Operating Frequency:
30 MHz
Maximum Emitter Base Voltage:
-6 V
Package Type:
TO-3P
Number of Elements per Chip:
1
Maximum DC Collector Current:
10 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
FJA4210
Detailed Description:
Bipolar (BJT) Transistor PNP 140V 10A 30MHz 100W Through Hole TO-3P
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 3A, 4V
Transistor Type:
PNP
Frequency - Transition:
30MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
500mV @ 500mA, 5A
Supplier Device Package:
TO-3P
Voltage - Collector Emitter Breakdown (Max):
140V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
100W
Customer Reference:
Package / Case:
TO-3P-3, SC-65-3
Current - Collector (Ic) (Max):
10A
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
ON Semiconductor
