Transistor Type:
NPN
Dimensions:
15.8 x 5 x 20.1mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
130 W
Maximum Collector Emitter Saturation Voltage:
3 V
Maximum Collector Base Voltage:
700 V
Maximum Collector Emitter Voltage:
400 V
Maximum Base Emitter Saturation Voltage:
1.6 V
Maximum Emitter Base Voltage:
9 V
Package Type:
TO-3P
Number of Elements per Chip:
1
Maximum DC Collector Current:
12 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
34 Weeks
Base Part Number:
FJA13009
Detailed Description:
Bipolar (BJT) Transistor NPN 400V 12A 4MHz 130W Through Hole TO-3P
Transistor Type:
NPN
Frequency - Transition:
4MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3V @ 3A, 12A
Supplier Device Package:
TO-3P
Voltage - Collector Emitter Breakdown (Max):
400V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
130W
Customer Reference:
Package / Case:
TO-3P-3, SC-65-3
Current - Collector (Ic) (Max):
12A
DC Current Gain (hFE) (Min) @ Ic, Vce:
8 @ 5A, 5V
Manufacturer:
ON Semiconductor
