Minimum DC Current Gain:
20
Transistor Type:
PNP
Dimensions:
10.67 x 4.83 x 16.51mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
60 W
Maximum Collector Emitter Saturation Voltage:
-0.5 V
Maximum Collector Emitter Voltage:
60 V
Maximum Base Emitter Saturation Voltage:
-1.3 V
Maximum Operating Frequency:
32 MHz
Height:
16.51mm
Width:
4.83mm
Length:
10.67mm
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum DC Collector Current:
4 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
D45C
Detailed Description:
Bipolar (BJT) Transistor PNP 60V 4A 32MHz 60W Through Hole TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 200mA, 1V
Transistor Type:
PNP
Frequency - Transition:
32MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
500mV @ 50mA, 1A
Supplier Device Package:
TO-220-3
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Bulk
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
60W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
4A
Current - Collector Cutoff (Max):
100µA
Manufacturer:
ON Semiconductor
