Dimensions:
10.28 x 4.82 x 15.75mm
Maximum Collector Emitter Saturation Voltage:
1 V dc
Width:
4.82mm
Transistor Configuration:
Single
Maximum Operating Frequency:
1 MHz
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
800 V dc
Maximum Base Emitter Saturation Voltage:
1.5 V dc
Maximum Emitter Base Voltage:
9 V
Length:
10.28mm
Maximum DC Collector Current:
4 A
Pin Count:
3
Minimum DC Current Gain:
5
Mounting Type:
Through Hole
Maximum Power Dissipation:
50 W
Maximum Collector Emitter Voltage:
500 V
Height:
15.75mm
Minimum Operating Temperature:
-65 °C
Base Part Number:
BUH50
Detailed Description:
Bipolar (BJT) Transistor NPN 500V 4A 4MHz 50W Through Hole TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce:
5 @ 2A, 5V
Transistor Type:
NPN
Frequency - Transition:
4MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 1A, 3A
Series:
SWITCHMODE™
Supplier Device Package:
TO-220AB
Voltage - Collector Emitter Breakdown (Max):
500V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
50W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
4A
Current - Collector Cutoff (Max):
100µA
Manufacturer:
ON Semiconductor
