Transistor Type:
NPN
Dimensions:
9.9 x 4.5 x 9.2mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
60 W
Maximum Collector Emitter Saturation Voltage:
1 V
Maximum Collector Base Voltage:
400 V
Maximum Collector Emitter Voltage:
200 V
Maximum Base Emitter Saturation Voltage:
1.2 V
Height:
9.2mm
Width:
4.5mm
Length:
9.9mm
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum DC Collector Current:
7 A
Maximum Emitter Base Voltage:
6 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
BU406
Detailed Description:
Bipolar (BJT) Transistor NPN 200V 7A 10MHz 60W Through Hole TO-220-3
Transistor Type:
NPN
Frequency - Transition:
10MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 500mA, 5A
Supplier Device Package:
TO-220-3
Voltage - Collector Emitter Breakdown (Max):
200V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
60W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
7A
Current - Collector Cutoff (Max):
5mA
Manufacturer:
ON Semiconductor
