Dimensions:
6.5 x 3.5 x 1.6mm
Maximum Collector Emitter Saturation Voltage:
1.3 V
Maximum Collector Cut-off Current:
50nA
Width:
3.5mm
Transistor Configuration:
Single
Maximum Continuous Collector Current:
800 mA
Package Type:
SOT-223
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
60 V
Maximum Base Emitter Saturation Voltage:
1.9 V
Maximum Emitter Base Voltage:
5 V
Length:
6.5mm
Pin Count:
3 + Tab
Minimum DC Current Gain:
1000
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1 W
Maximum Collector Emitter Voltage:
45 V
Height:
1.6mm
Minimum Operating Temperature:
-55 °C
Base Part Number:
BSP50
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 45V 800mA 1W Surface Mount SOT-223-4
DC Current Gain (hFE) (Min) @ Ic, Vce:
2000 @ 500mA, 10V
Transistor Type:
NPN - Darlington
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1.3V @ 500µA, 500mA
Supplier Device Package:
SOT-223-4
Voltage - Collector Emitter Breakdown (Max):
45V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
1W
Customer Reference:
Package / Case:
TO-261-4, TO-261AA
Current - Collector (Ic) (Max):
800mA
Current - Collector Cutoff (Max):
50nA
Manufacturer:
ON Semiconductor
