Minimum DC Current Gain:
750
Transistor Type:
NPN
Dimensions:
8 x 3.25 x 11mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
40 W
Maximum Continuous Collector Current:
4 A
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
80 V
Maximum Collector Cut-off Current:
500µA
Height:
11mm
Width:
3.25mm
Length:
8mm
Package Type:
TO-126
Number of Elements per Chip:
1
Maximum Collector Emitter Saturation Voltage:
2.8 V
Maximum Emitter Base Voltage:
5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
BD679
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 2A, 3V
Transistor Type:
NPN - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2.8V @ 40mA, 2A
Supplier Device Package:
TO-126-3
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
40W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
4A
Current - Collector Cutoff (Max):
500µA
Manufacturer:
ON Semiconductor
