Minimum DC Current Gain:
15
Transistor Type:
PNP
Dimensions:
8 x 3.25 x 11mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
30 W
Maximum Collector Emitter Saturation Voltage:
-0.8 V
Maximum Collector Base Voltage:
-45 V
Maximum Collector Emitter Voltage:
45 V
Maximum Operating Frequency:
3 MHz
Height:
11mm
Width:
3.25mm
Length:
8mm
Package Type:
TO-126
Number of Elements per Chip:
1
Maximum DC Collector Current:
3 A
Maximum Emitter Base Voltage:
-5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
BD176
Detailed Description:
Bipolar (BJT) Transistor PNP 45V 3A 3MHz 30W Through Hole TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
63 @ 150mA, 2V
Transistor Type:
PNP
Frequency - Transition:
3MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
800mV @ 100mA, 1A
Supplier Device Package:
TO-126-3
Voltage - Collector Emitter Breakdown (Max):
45V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
30W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
3A
Current - Collector Cutoff (Max):
100µA (ICBO)
Manufacturer:
ON Semiconductor
