ON Semiconductor BD1376STU

ON Semiconductor

Product Information

Base Part Number:
BD137
Detailed Description:
Bipolar (BJT) Transistor NPN 60V 1.5A 1.25W Through Hole TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 150mA, 2V
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
500mV @ 50mA, 500mA
Supplier Device Package:
TO-126-3
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
1.25W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
1.5A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is BD1376STU. Base Part Number: bd137. It features bipolar (bjt) transistor npn 60v 1.5a 1.25w through hole to-126-3. Furthermore, 40 @ 150ma, 2v is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in through hole configuration. The 500mv @ 50ma, 500ma is the maximum Vce saturation. to-126-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 1.25w. Moreover, the product comes in to-225aa, to-126-3. The maximum collector current includes 1.5a. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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BD135/137/139(Datasheets)

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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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