ON Semiconductor BCV27_D87Z

ON Semiconductor

Product Information

Base Part Number:
BCV27
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 30V 1.2A 220MHz 350mW Surface Mount SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
20000 @ 100mA, 5V
Transistor Type:
NPN - Darlington
Frequency - Transition:
220MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1V @ 100µA, 100mA
Supplier Device Package:
SOT-23-3
Voltage - Collector Emitter Breakdown (Max):
30V
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
350mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
1.2A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is BCV27_D87Z. Base Part Number: bcv27. It features bipolar (bjt) transistor npn - darlington 30v 1.2a 220mhz 350mw surface mount sot-23-3. Furthermore, 20000 @ 100ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn - darlington type. The transition frequency of the product is 220mhz. The product is available in surface mount configuration. The 1v @ 100µa, 100ma is the maximum Vce saturation. sot-23-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 30v. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 350mw. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum collector current includes 1.2a. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Mold Compound 12/Dec/2007(PCN Design/Specification)

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