Dimensions:
5 x 4 x 5mm
Maximum Collector Emitter Saturation Voltage:
0.4 V
Width:
4mm
Transistor Configuration:
Single
Maximum Operating Frequency:
150 MHz
Package Type:
NP
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
60 V
Maximum Base Emitter Saturation Voltage:
1.2 V
Maximum Emitter Base Voltage:
6 V
Length:
5mm
Maximum DC Collector Current:
2 A
Pin Count:
3
Minimum DC Current Gain:
40
Mounting Type:
Through Hole
Maximum Power Dissipation:
750 mW
Maximum Collector Emitter Voltage:
50 V
Height:
5mm
Base Part Number:
2SD1835
Detailed Description:
Bipolar (BJT) Transistor NPN 50V 2A 150MHz 750mW Through Hole 3-NP
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 100mA, 2V
Transistor Type:
NPN
Frequency - Transition:
150MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
400mV @ 50mA, 1A
Supplier Device Package:
3-NP
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
750mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector (Ic) (Max):
2A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
