ON Semiconductor 2SD1012G-SPA

ON Semiconductor

Product Information

Base Part Number:
2SD1012
Detailed Description:
Bipolar (BJT) Transistor NPN 15V 700mA 250MHz 250mW Through Hole 3-SPA
DC Current Gain (hFE) (Min) @ Ic, Vce:
280 @ 50mA, 2V
Transistor Type:
NPN
Frequency - Transition:
250MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
80mV @ 10mA, 100mA
Supplier Device Package:
3-SPA
Voltage - Collector Emitter Breakdown (Max):
15V
Packaging:
Bulk
Operating Temperature:
125°C (TJ)
Power - Max:
250mW
Customer Reference:
Package / Case:
3-SIP
Current - Collector (Ic) (Max):
700mA
Current - Collector Cutoff (Max):
1µA (ICBO)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is 2SD1012G-SPA. Base Part Number: 2sd1012. It features bipolar (bjt) transistor npn 15v 700ma 250mhz 250mw through hole 3-spa. Furthermore, 280 @ 50ma, 2v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 250mhz. The product is available in through hole configuration. The 80mv @ 10ma, 100ma is the maximum Vce saturation. 3-spa is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 15v. In addition, bulk is the available packaging type of the product. The product has 125°c (tj) operating temperature range. The maximum power of the product is 250mw. Moreover, the product comes in 3-sip. The maximum collector current includes 700ma. In addition, 1µa (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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EOL 21/Apr/2016(PCN Obsolescence/ EOL)

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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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