Dimensions:
6.9 x 2.5 x 4.5mm
Maximum Collector Emitter Saturation Voltage:
450 mV
Width:
2.5mm
Transistor Configuration:
Single
Maximum Operating Frequency:
1 MHz
Package Type:
NMP
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
180 V
Maximum Base Emitter Saturation Voltage:
1.2 V
Maximum Emitter Base Voltage:
6 V
Length:
6.9mm
Maximum DC Collector Current:
1.5 A
Pin Count:
3
Minimum DC Current Gain:
140
Mounting Type:
Through Hole
Maximum Power Dissipation:
1 W
Maximum Collector Emitter Voltage:
160 V
Height:
4.5mm
Base Part Number:
2SC4614
Detailed Description:
Bipolar (BJT) Transistor NPN 160V 1.5A 120MHz 1W Through Hole 3-NMP
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 100mA, 5V
Transistor Type:
NPN
Frequency - Transition:
120MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
450mV @ 50mA, 500mA
Supplier Device Package:
3-NMP
Voltage - Collector Emitter Breakdown (Max):
160V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
1W
Customer Reference:
Package / Case:
SC-71
Current - Collector (Ic) (Max):
1.5A
Current - Collector Cutoff (Max):
1µA (ICBO)
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is 2SC4614S-AN. The given dimensions of the product include 6.9 x 2.5 x 4.5mm. The product has a maximum 450 mv collector emitter saturation voltage . Furthermore, the product is 2.5mm wide. The product offers single transistor configuration. It carries 1 mhz of maximum operating frequency. The package is a sort of nmp. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. The transistor is a npn type. Additionally, it has 180 v maximum collector base voltage. In addition, the product has a maximum 1.2 v base emitter saturation voltage . It features a 6 v of maximum emitter base voltage. Its accurate length is 6.9mm. Moreover, it has a maximum DC collector current of 1.5 a. It contains 3 pins. It features up to 140 of minimum DC current gain. The product is available in through hole configuration. Provides up to 1 w maximum power dissipation. Whereas features a 160 v of collector emitter voltage (max). In addition, the height is 4.5mm. Base Part Number: 2sc4614. It features bipolar (bjt) transistor npn 160v 1.5a 120mhz 1w through hole 3-nmp. Furthermore, 100 @ 100ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 120mhz. The 450mv @ 50ma, 500ma is the maximum Vce saturation. 3-nmp is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 160v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 1w. Moreover, the product comes in sc-71. The maximum collector current includes 1.5a. In addition, 1µa (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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