ON Semiconductor 2SC2812N6-CPA-TB-E

ON Semiconductor

Product Information

Base Part Number:
2SC2812
Detailed Description:
Bipolar (BJT) Transistor NPN 50V 150mA 100MHz 200mW Surface Mount 3-CP
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 1mA, 6V
Transistor Type:
NPN
Frequency - Transition:
100MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
500mV @ 5mA, 50mA
Supplier Device Package:
3-CP
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C (TJ)
Power - Max:
200mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
150mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is 2SC2812N6-CPA-TB-E. Base Part Number: 2sc2812. It features bipolar (bjt) transistor npn 50v 150ma 100mhz 200mw surface mount 3-cp. Furthermore, 200 @ 1ma, 6v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 100mhz. The product is available in surface mount configuration. The 500mv @ 5ma, 50ma is the maximum Vce saturation. 3-cp is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, tape & reel (tr) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 200mw. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum collector current includes 150ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Multiple Devices 14/Apr/2014(PCN Obsolescence/ EOL)
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2SA1179N/2SC2812N(Datasheets)

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