ON Semiconductor 2SA1020RLRAG

ON Semiconductor

Product Information

Base Part Number:
2SA1020
Detailed Description:
Bipolar (BJT) Transistor PNP 50V 2A 100MHz 900mW Through Hole TO-92 (TO-226)
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 500mA, 2V
Transistor Type:
PNP
Frequency - Transition:
100MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
500mV @ 50mA, 1A
Supplier Device Package:
TO-92 (TO-226)
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
900mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 Long Body (Formed Leads)
Current - Collector (Ic) (Max):
2A
Current - Collector Cutoff (Max):
1µA (ICBO)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is 2SA1020RLRAG. Base Part Number: 2sa1020. It features bipolar (bjt) transistor pnp 50v 2a 100mhz 900mw through hole to-92 (to-226). Furthermore, 70 @ 500ma, 2v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 100mhz. The product is available in through hole configuration. The 500mv @ 50ma, 1a is the maximum Vce saturation. to-92 (to-226) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 900mw. Moreover, the product comes in to-226-3, to-92-3 long body (formed leads). The maximum collector current includes 2a. In addition, 1µa (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Multiple Devices 08/Nov/2014(PCN Obsolescence/ EOL)
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Multiple Devices Revision 26/Nov/2014(PCN Obsolescence/ EOL)
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2SA1020(Datasheets)

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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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