ON Semiconductor 2N5655

2N5655 ON Semiconductor
2N5655
ON Semiconductor

Product Information

Base Part Number:
2N5655
Detailed Description:
Bipolar (BJT) Transistor NPN 250V 500mA 10MHz 20W Through Hole TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 100mA, 10mV
Transistor Type:
NPN
Frequency - Transition:
10MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
10V @ 100mA, 500mA
Supplier Device Package:
TO-126
Voltage - Collector Emitter Breakdown (Max):
250V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
20W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
500mA
Current - Collector Cutoff (Max):
100µA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is 2N5655. Base Part Number: 2n5655. It features bipolar (bjt) transistor npn 250v 500ma 10mhz 20w through hole to-126. Furthermore, 30 @ 100ma, 10mv is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 10mhz. The product is available in through hole configuration. The 10v @ 100ma, 500ma is the maximum Vce saturation. to-126 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 250v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 20w. Moreover, the product comes in to-225aa, to-126-3. The maximum collector current includes 500ma. In addition, 100µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Multiple Devices 20/Aug/2008(PCN Obsolescence/ EOL)
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2N5655G, 5657G(Datasheets)

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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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