ON Semiconductor 2N5308_D74Z
Product Information
Base Part Number:
2N5308
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 40V 1.2A 625mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
7000 @ 2mA, 5V
Transistor Type:
NPN - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.4V @ 200µA, 200mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Tape & Box (TB)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
625mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector (Ic) (Max):
1.2A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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Yes. We ship 2N5308_D74Z Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is 2N5308_D74Z. Base Part Number: 2n5308. It features bipolar (bjt) transistor npn - darlington 40v 1.2a 625mw through hole to-92-3. Furthermore, 7000 @ 2ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn - darlington type. The product is available in through hole configuration. The 1.4v @ 200µa, 200ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 40v. In addition, tape & box (tb) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 625mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) (formed leads). The maximum collector current includes 1.2a. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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