Minimum DC Current Gain:
20
Transistor Type:
NPN
Dimensions:
5.2 x 4.19 x 5.33mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
1.5 W
Maximum Continuous Collector Current:
600 mA
Maximum Collector Emitter Voltage:
40 V dc
Maximum Base Emitter Saturation Voltage:
1.2 V dc
Height:
5.33mm
Width:
4.19mm
Length:
5.2mm
Package Type:
TO-92
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
0.75 V dc
Maximum Emitter Base Voltage:
6 V dc
Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
2N4401
Detailed Description:
Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 625mW Through Hole TO-92-3
Transistor Type:
NPN
Frequency - Transition:
250MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
750mV @ 50mA, 500mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
625mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector (Ic) (Max):
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 1V
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is 2N4401TFR. It features up to 20 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 5.2 x 4.19 x 5.33mm. The product is available in through hole configuration. Provides up to 1.5 w maximum power dissipation. The product has a maximum 600 ma continuous collector current . Whereas features a 40 v dc of collector emitter voltage (max). In addition, the product has a maximum 1.2 v dc base emitter saturation voltage . In addition, the height is 5.33mm. Furthermore, the product is 4.19mm wide. Its accurate length is 5.2mm. The package is a sort of to-92. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. The product has a maximum 0.75 v dc collector emitter saturation voltage . It features a 6 v dc of maximum emitter base voltage. The product is available in single configuration. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Base Part Number: 2n4401. It features bipolar (bjt) transistor npn 40v 600ma 250mhz 625mw through hole to-92-3. The transition frequency of the product is 250mhz. The 750mv @ 50ma, 500ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 40v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 625mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) (formed leads). The maximum collector current includes 600ma. Furthermore, 100 @ 150ma, 1v is the minimum DC current gain at given voltage. The on semiconductor's product offers user-desired applications.
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