Minimum DC Current Gain:
20
Transistor Type:
NPN
Dimensions:
5.2 x 4.19 x 5.33mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
1.5 W
Maximum Continuous Collector Current:
600 mA
Maximum Collector Emitter Voltage:
40 V dc
Maximum Base Emitter Saturation Voltage:
1.2 V dc
Height:
5.33mm
Width:
4.19mm
Length:
5.2mm
Package Type:
TO-92
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
0.75 V dc
Maximum Emitter Base Voltage:
6 V dc
Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
2N4401
Detailed Description:
Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 625mW Through Hole TO-92-3
Transistor Type:
NPN
Frequency - Transition:
250MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
750mV @ 50mA, 500mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
625mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector (Ic) (Max):
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 1V
Manufacturer:
ON Semiconductor
