ON Semiconductor 2N3906TAR
Product Information
Transistor Type:
PNP
Dimensions:
5.2 x 4.19 x 5.33mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
625 mW
Maximum Collector Emitter Saturation Voltage:
-0.25 V
Maximum Collector Base Voltage:
-40 V
Maximum Collector Emitter Voltage:
40 V
Maximum Base Emitter Saturation Voltage:
-0.85 V
Maximum Operating Frequency:
250 MHz
Maximum Emitter Base Voltage:
-5 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
200 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
2N3906
Detailed Description:
Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 625mW Through Hole TO-92-3
Transistor Type:
PNP
Frequency - Transition:
250MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
400mV @ 5mA, 50mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
625mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector (Ic) (Max):
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 10mA, 1V
Manufacturer:
ON Semiconductor
Checking for live stock
FAQs
Yes. You can also search 2N3906TAR on website for other similar products.
We accept all major payment methods for all products including ET14508229. Please check your shopping cart at the time of order.
You can order ON Semiconductor brand products with 2N3906TAR directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor 2N3906TAR. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor 2N3906TAR.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14508229 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14508229.
Yes. We ship 2N3906TAR Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is 2N3906TAR. The transistor is a pnp type. The given dimensions of the product include 5.2 x 4.19 x 5.33mm. The product is available in through hole configuration. Provides up to 625 mw maximum power dissipation. The product has a maximum -0.25 v collector emitter saturation voltage . Additionally, it has -40 v maximum collector base voltage. Whereas features a 40 v of collector emitter voltage (max). In addition, the product has a maximum -0.85 v base emitter saturation voltage . It carries 250 mhz of maximum operating frequency. It features a -5 v of maximum emitter base voltage. The package is a sort of to-92. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 200 ma. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Base Part Number: 2n3906. It features bipolar (bjt) transistor pnp 40v 200ma 250mhz 625mw through hole to-92-3. The transition frequency of the product is 250mhz. The 400mv @ 5ma, 50ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 40v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 625mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) (formed leads). The maximum collector current includes 200ma. Furthermore, 100 @ 10ma, 1v is the minimum DC current gain at given voltage. The on semiconductor's product offers user-desired applications.
Reviews
Don’t hesitate to ask questions for better clarification.