ON Semiconductor 2N3055H

ON Semiconductor

Product Information

Base Part Number:
2N3055
Detailed Description:
Bipolar (BJT) Transistor NPN 60V 15A 2.5MHz 115W Through Hole TO-204 (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 4A, 4V
Transistor Type:
NPN
Frequency - Transition:
2.5MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3V @ 3.3A, 10A
Supplier Device Package:
TO-204 (TO-3)
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Tray
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
115W
Customer Reference:
Package / Case:
TO-204AA, TO-3
Current - Collector (Ic) (Max):
15A
Current - Collector Cutoff (Max):
700µA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is 2N3055H. Base Part Number: 2n3055. It features bipolar (bjt) transistor npn 60v 15a 2.5mhz 115w through hole to-204 (to-3). Furthermore, 20 @ 4a, 4v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 2.5mhz. The product is available in through hole configuration. The 3v @ 3.3a, 10a is the maximum Vce saturation. to-204 (to-3) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, tray is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 115w. Moreover, the product comes in to-204aa, to-3. The maximum collector current includes 15a. In addition, 700µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Multiple Devices 30/Jun/2006(PCN Obsolescence/ EOL)
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2N3055, MJ2955(Datasheets)

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