Minimum DC Current Gain:
100
Transistor Type:
NPN
Dimensions:
5.2 x 4.19 x 5.33mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
625 mW
Maximum Collector Emitter Saturation Voltage:
0.25 V
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
80 V
Maximum Operating Frequency:
100 MHz
Height:
5.33mm
Width:
4.19mm
Length:
5.2mm
Package Type:
TO-92
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum DC Collector Current:
0.5 A
Maximum Emitter Base Voltage:
4 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
500 mA
HTSUS:
8542.39.0001
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 100mA, 1V
Frequency - Transition:
100MHz
Vce Saturation (Max) @ Ib, Ic:
250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max):
80 V
Transistor Type:
NPN
Package:
Bulk
Current - Collector Cutoff (Max):
100nA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
625 mW
ECCN:
EAR99
This is Fairchild NPN Transistor 0.5 A 80 V 3-Pin TO-92 manufactured by Fairchild Semiconductor. The manufacturer part number is MPSA06RA. It features up to 100 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 5.2 x 4.19 x 5.33mm. The product is available in through hole configuration. Provides up to 625 mw maximum power dissipation. The product has a maximum 0.25 v collector emitter saturation voltage . Additionally, it has 80 v maximum collector base voltage. Whereas features a 80 v of collector emitter voltage (max). It carries 100 mhz of maximum operating frequency. In addition, the height is 5.33mm. Furthermore, the product is 4.19mm wide. Its accurate length is 5.2mm. The package is a sort of to-92. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. Moreover, it has a maximum DC collector current of 0.5 a. It features a 4 v of maximum emitter base voltage. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 500 ma. It is assigned with possible HTSUS value of 8542.39.0001. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) formed leads. Furthermore, 100 @ 100ma, 1v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. The 250mv @ 10ma, 100ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 80 v. It is shipped in bulk package . In addition, 100na is the maximum current at collector cutoff. to-92-3 is the supplier device package value. The maximum power of the product is 625 mw. The product is designated with the ear99 code number.
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