Minimum DC Current Gain:
15
Transistor Type:
PNP
Dimensions:
4.58 x 3.86 x 4.58mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
0.625 W
Maximum Collector Emitter Saturation Voltage:
-0.30 V
Maximum Collector Base Voltage:
-350 V
Maximum Collector Emitter Voltage:
350 V
Maximum Base Emitter Saturation Voltage:
-0.75 V
Maximum Operating Frequency:
200 MHz
Height:
4.58mm
Width:
3.86mm
Length:
4.58mm
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
0.5 A
Maximum Emitter Base Voltage:
-5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
500 mA
HTSUS:
0000.00.0000
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 50mA, 10V
Frequency - Transition:
200MHz
Vce Saturation (Max) @ Ib, Ic:
1V @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max):
350 V
Transistor Type:
PNP
Package:
Bulk
Current - Collector Cutoff (Max):
50nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
625 mW
Base Product Number:
2N6520
This is Fairchild 2N6520 PNP Transistor 0.5 A 350 V 3-Pin TO-92 manufactured by Fairchild Semiconductor. The manufacturer part number is 2N6520TA. It features up to 15 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 4.58 x 3.86 x 4.58mm. The product is available in through hole configuration. Provides up to 0.625 w maximum power dissipation. The product has a maximum -0.30 v collector emitter saturation voltage . Additionally, it has -350 v maximum collector base voltage. Whereas features a 350 v of collector emitter voltage (max). In addition, the product has a maximum -0.75 v base emitter saturation voltage . It carries 200 mhz of maximum operating frequency. In addition, the height is 4.58mm. Furthermore, the product is 3.86mm wide. Its accurate length is 4.58mm. The package is a sort of to-92. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 0.5 a. It features a -5 v of maximum emitter base voltage. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 500 ma. It is assigned with possible HTSUS value of 0000.00.0000. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) formed leads. Furthermore, 20 @ 50ma, 10v is the minimum DC current gain at given voltage. The transition frequency of the product is 200mhz. The 1v @ 5ma, 50ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 350 v. It is shipped in bulk package . In addition, 50na (icbo) is the maximum current at collector cutoff. to-92-3 is the supplier device package value. The maximum power of the product is 625 mw. Moreover, it corresponds to 2n6520, a base product number of the product.
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