Minimum DC Current Gain:
110
Transistor Type:
NPN
Dimensions:
4.58 x 3.86 x 4.58mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
500 mW
Maximum Collector Emitter Saturation Voltage:
600 mV
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
65 V
Maximum Base Emitter Saturation Voltage:
900 mV
Maximum Operating Frequency:
1 MHz
Height:
4.58mm
Width:
3.86mm
Length:
4.58mm
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
100 mA
Maximum Emitter Base Voltage:
6 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
65 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
420 @ 2mA, 5V
Frequency - Transition:
300MHz
Vce Saturation (Max) @ Ib, Ic:
600mV @ 5mA, 100mA
REACH Status:
REACH Unaffected
Transistor Type:
NPN
Package:
Bulk
Moisture Sensitivity Level (MSL):
Not Applicable
Current - Collector Cutoff (Max):
15nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
500 mW
This is ON Semi NPN Transistor 100 mA 65 V 3-Pin TO-92 manufactured by Fairchild Semiconductor. The manufacturer part number is BC546CTA. It features up to 110 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 4.58 x 3.86 x 4.58mm. The product is available in through hole configuration. Provides up to 500 mw maximum power dissipation. The product has a maximum 600 mv collector emitter saturation voltage . Additionally, it has 80 v maximum collector base voltage. Whereas features a 65 v of collector emitter voltage (max). In addition, the product has a maximum 900 mv base emitter saturation voltage . It carries 1 mhz of maximum operating frequency. In addition, the height is 4.58mm. Furthermore, the product is 3.86mm wide. Its accurate length is 4.58mm. The package is a sort of to-92. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 100 ma. It features a 6 v of maximum emitter base voltage. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 100 ma. The maximum collector emitter breakdown voltage of the product is 65 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) formed leads. Furthermore, 420 @ 2ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 300mhz. The 600mv @ 5ma, 100ma is the maximum Vce saturation. In addition, it is reach unaffected. It is shipped in bulk package . Its typical moisture sensitivity level is not applicable. In addition, 15na (icbo) is the maximum current at collector cutoff. to-92-3 is the supplier device package value. The maximum power of the product is 500 mw.
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