Manufacturer Standard Lead Time:
18 Weeks
Current - Collector (Ic) (Max):
1A
Detailed Description:
Bipolar (BJT) Transistor PNP 80V 1A 500mW Through Hole TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 100mA, 5V
Transistor Type:
PNP
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 100mA, 1A
Series:
Military, MIL-PRF-19500/512
Package / Case:
TO-206AA, TO-18-3 Metal Can
Supplier Device Package:
TO-18 (TO-206AA)
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Bulk
Operating Temperature:
-55°C ~ 200°C (TJ)
Power - Max:
500mW
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
Microsemi Corporation
This is manufactured by Microsemi Corporation. The manufacturer part number is JAN2N4029. It has typical 18 weeks of manufacturer standard lead time. The maximum collector current includes 1a. It features bipolar (bjt) transistor pnp 80v 1a 500mw through hole to-18 (to-206aa). Furthermore, 100 @ 100ma, 5v is the minimum DC current gain at given voltage. The transistor is a pnp type. The product is available in through hole configuration. The 1v @ 100ma, 1a is the maximum Vce saturation. The product military, mil-prf-19500/512, is a highly preferred choice for users. Moreover, the product comes in to-206aa, to-18-3 metal can. to-18 (to-206aa) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 80v. In addition, bulk is the available packaging type of the product. The product has -55°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 500mw. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 10µa (icbo) is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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